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Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction
- Source :
- ACS Applied Materials & Interfaces. 11:40850-40859
- Publication Year :
- 2019
- Publisher :
- American Chemical Society (ACS), 2019.
-
Abstract
- In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS2) with a sputtered indium–gallium–zi...
- Subjects :
- Materials science
Ambipolar diffusion
business.industry
Polarity (physics)
Transistor
Tungsten disulfide
Stacking
Heterojunction
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
High sensitive
01 natural sciences
0104 chemical sciences
law.invention
chemistry.chemical_compound
chemistry
law
Thin-film transistor
Optoelectronics
General Materials Science
0210 nano-technology
business
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi...........ce0f7056d04b57acda5eb7b0b4dc0cde
- Full Text :
- https://doi.org/10.1021/acsami.9b13773