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High-Rate SiO2 Deposition by Oxygen Cold Arc Plasma Jet at Atmospheric Pressure
- Source :
- Plasma Processes and Polymers. 5:861-866
- Publication Year :
- 2008
- Publisher :
- Wiley, 2008.
-
Abstract
- SiO 2 thin films were deposited by a cold arc plasma jet at atmospheric pressure. The cold arc plasma jet was operated with O 2 gas of 30 L min -1 , while a He/TEOS mixture of 1000 sccm was added to the plume of the plasma jet as a precursor. The plasma jet was continuously moved in the xy direction for uniform film thickness. The deposition rate at various conditions was studied by controlling the substrate distance, precursor inlet position, and substrate temperature; the physical and chemical properties of the films were characterized by SEM and XPS. A high deposition rate was attained using the cold arc plasma jet deposition system in open air; it is suggested that this originates from the abundant oxygen atoms produced in the cold arc plasma jet.
- Subjects :
- Polymers and Plastics
Atmospheric pressure
Analytical chemistry
chemistry.chemical_element
Substrate (electronics)
respiratory system
equipment and supplies
Condensed Matter Physics
complex mixtures
Oxygen
Arc (geometry)
Plasma arc welding
chemistry
X-ray photoelectron spectroscopy
Physics::Plasma Physics
Thin film
human activities
Deposition (chemistry)
circulatory and respiratory physiology
Subjects
Details
- ISSN :
- 16128850
- Volume :
- 5
- Database :
- OpenAIRE
- Journal :
- Plasma Processes and Polymers
- Accession number :
- edsair.doi...........ce243ca136c2a64bd8955939fb62d0e8