Deposition of rutile (TiO2) with preferred orientation by assisted high power impulse magnetron sputtering

The effect of energetic ion bombardment on TiO 2 crystallographic phase formation was studied. Films were deposited using high-power impulse magnetron sputtering (HiPIMS) assisted by an electron cyclotron wave resonance (ECWR) plasma. The ECWR assistance allows a significant reduction of pressure down to 0.075 Pa during reactive HiPIMS deposition and subsequently enables control of the energy of the deposited species over a wide range. Films deposited at high ion energies and deposition rates form rutile with (101) a preferred orientation. With decreasing ion energy and deposition rates, rutile is formed with random crystallite orientation, and finally at low ion energies the anatase phase occurs. It is supposed that particles gain high energy during the HiPIMS pulse while the ECWR discharge is mostly responsible for substrate heating due to dissipated power. However, the energetic contribution of the ECWR discharge is not sufficient for annealing and phase transformation.