Oxygen ion-implanted optical channel waveguides in Nd : MgO : LiNbO3: fabrication, characterization and simulation

x-cut Nd : MgO : LiNbO3 wafers are implanted with 3 MeV O+ ions at a dose of 6 × 1014 cm−2, directly using a photoresist mask consisting of a series of open stripes of width 10 µm. The extraordinary refractive index (RI) experiences positive changes with respect to the bulk after ion bombardment and post-implantation annealing; therefore, channel waveguide structures are formed in the implanted regions. The near field intensity distributions of the transverse-electric modes are obtained by an end-fire coupling arrangement. The modal simulation result shows the reasonableness of the reconstructed RI profiles, which is helpful in designing practical waveguide devices produced by the ion implantation technique.