Radiation-hard static induction transistor

Authors :: John Bartko
J. M. Hwang
P. Rai-Choudhury
M.H. Hanes
S.G. Leslie
Source :: IEEE Transactions on Nuclear Science. 35:1475-1479
Publication Year :: 1988
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 1988.
Abstract: The design, fabrication, and characteristics of a 350-V, 100-A buried-gate static induction transistor (SIT) as a power switching device for applications in military and space environments because of its potential for radiation hardness, high-frequency operation, and the incorporation of on-chip smart power sensor and logic functions are described. The potential radiation hardness of this class of devices was evaluated by measurement of SIT characteristics after irradiation with 100-Mrad (2-MeV) electrons and up to 10/sup 16/ fission neutrons/cm/sup 2/. High-temperature operation and the possibility of radiation damage self-annealing are discussed. >