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Photoluminescence from 'spike doped' hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells
- Source :
- Surface Science. 142:504-508
- Publication Year :
- 1984
- Publisher :
- Elsevier BV, 1984.
-
Abstract
- We have performed photoluminescence (PL) measurements on GaAs-Al0.3Ga0.7As superlattices where Si donors have been selectively doped at the center of the non-interacting quantum wells. A PL feature is shown to be donor related and is attributed to the radiative recombination of an electron of a neutral donor at the center of a quantum well with a heavy hole. Furthermore, our measurements indicate that the binding energy of the electron bound at a neutral donor is slightly larger than that of a coupled electron heavy hole exciton and, in addition, is significantly larger than that observed for donors in bulk GaAs. These observations are in substantial agreement with recent theoretical calculations.
- Subjects :
- Photoluminescence
Condensed Matter::Other
Chemistry
Astrophysics::High Energy Astrophysical Phenomena
Superlattice
Exciton
Doping
Binding energy
Surfaces and Interfaces
Electron
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Surfaces, Coatings and Films
Condensed Matter::Materials Science
Materials Chemistry
Spontaneous emission
Atomic physics
Quantum well
Subjects
Details
- ISSN :
- 00396028
- Volume :
- 142
- Database :
- OpenAIRE
- Journal :
- Surface Science
- Accession number :
- edsair.doi...........cf1f90eb081d9fc0ffe642bc82b4664b