Cite
Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs
MLA
G. Guégan, et al. “Low Temperature Operation of Ultra-Thin Gate Oxide Sub-0.1 Μm MOSFETs.” Journal de Physique IV (Proceedings), vol. 12, May 2002, pp. 57–60. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........cf25d64add640c8d8bc3e4b1ed79a7d5&authtype=sso&custid=ns315887.
APA
G. Guégan, B. Cretu, F. Balestra, & Gerard Ghibaudo. (2002). Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs. Journal de Physique IV (Proceedings), 12, 57–60.
Chicago
G. Guégan, B. Cretu, F. Balestra, and Gerard Ghibaudo. 2002. “Low Temperature Operation of Ultra-Thin Gate Oxide Sub-0.1 Μm MOSFETs.” Journal de Physique IV (Proceedings) 12 (May): 57–60. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........cf25d64add640c8d8bc3e4b1ed79a7d5&authtype=sso&custid=ns315887.