Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

Authors :: M. Zahed M. Khan
Tien Khee Ng
Boon S. Ooi
Source :: 8th International Conference on High-capacity Optical Networks and Emerging Technologies.
Publication Year :: 2011
Publisher :: IEEE, 2011.
Abstract: The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance.

Subjects :: Condensed matter physics
law
Quantum dash lasers
Chemistry
Relaxation (NMR)
Relaxation process
Rate equation
Laser
Ground state
Current density
Quantum
law.invention

Database :: OpenAIRE
Journal :: 8th International Conference on High-capacity Optical Networks and Emerging Technologies
Accession number :: edsair.doi...........cf4bb8a4b4ef366706c2a3194d7559b3
Full Text :: https://doi.org/10.1109/honet.2011.6149813

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