Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

Neutron single event effect (SEE) tolerance of SiC power MOSFETs with different drift region design were evaluated. The SEE is detected over the SEE threshold voltage (VSEE). The failure rate increases exponentially as the drain voltage increases above VSEE. The device with higher avalanche breakdown voltage has higher SEE threshold voltage. The neutron SEE tolerance of MOSFETs and PiN diodes of the same epitaxial structure were also evaluated. There was no significant difference in the neutron SEE tolerance of these devices.