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Comparison of electrical and interfacial characteristics between atomic-layer-deposited AlN and AlGaN on a GaN substrate
- Source :
- Applied Physics A. 126
- Publication Year :
- 2020
- Publisher :
- Springer Science and Business Media LLC, 2020.
-
Abstract
- The electrical and interfacial characteristics of AlN/GaN and AlGaN/GaN heterostructures prepared by thermal atomic layer deposition (ALD) were investigated in this work. According to the parallel conductance method, the AlGaN/GaN sample showed two border traps with energies of ~ 0.38 and ~ 0.46 eV, which were not observed for the AlN/GaN sample. The AlN/GaN sample also showed a lower interface trap density and a lower reverse leakage current. X-ray photoelectron spectroscopy analysis indicated that during the initial ALD deposition process, most of the Al and N atoms tended to combine with oxygen atoms as opposed to Ga atoms. As a result, AlGaN layer formation was delayed, resulting in the creation of a defective interfacial layer at the AlGaN/GaN interface. Thus, our results indicate that the initial ALD process should focus on removing the defective interfacial layer during AlGaN deposition for device optimization.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Heterojunction
02 engineering and technology
General Chemistry
Substrate (electronics)
Conductance method
021001 nanoscience & nanotechnology
01 natural sciences
Atomic layer deposition
Reverse leakage current
X-ray photoelectron spectroscopy
0103 physical sciences
Optoelectronics
General Materials Science
0210 nano-technology
business
Layer (electronics)
Deposition (law)
Subjects
Details
- ISSN :
- 14320630 and 09478396
- Volume :
- 126
- Database :
- OpenAIRE
- Journal :
- Applied Physics A
- Accession number :
- edsair.doi...........d08a3fb8956aad3412b77e61109b9639