Back to Search Start Over

Active Junction Temperature Control of IGBT Based on Adjusting the Turn-off Trajectory

Authors :
Luowei Zhou
Yi Zhang
Xiong Du
Wang Kaihong
Pengju Sun
Bo Wang
Source :
IEEE Transactions on Power Electronics. 33:5811-5823
Publication Year :
2018
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2018.

Abstract

The junction temperature fluctuation of an insulated-gate bipolar transistor (IGBT) is the most important factor of its aging failure, and smoothing the fluctuation is an effective way to improve the life of an IGBT. The existing methods for smoothing the fluctuation by active junction temperature control are not yet ready wide application, and exploring the different approaches to active junction temperature control is a hot topic. This paper presents a method of active junction temperature control that shifts the turn-off trajectory of an IGBT to adjust the IGBT turn-off loss for smoothing the junction temperature. The relationship between parameters of the adjusting circuit and turn-off loss is analyzed. On the basis of this analysis, a method of estimating the smoothing ability for the proposed active junction temperature control is deduced. Using an IGBT installed in a 1.2-MW direct-drive wind power converter as an example, the evaluation result shows that the proposed method can completely smooth the junction temperature fluctuation caused by a 40% rated load fluctuation. Finally, a low-power experiment is carried out.

Details

ISSN :
19410107 and 08858993
Volume :
33
Database :
OpenAIRE
Journal :
IEEE Transactions on Power Electronics
Accession number :
edsair.doi...........d1194325a25c2b220c46859cbb22bf9a