High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode

A zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode is demonstrated. The diode is compatible with AlGaN/GaN HEMT in fabrication process. Taking advantage of threshold-voltage modulation of fluorine plasma treatment technique, the diode features low turn-on voltage and strong nonlinearity at zero bias thus eliminating DC supplies for the application of zero-bias microwave detection. The diode exhibits good sensitivity from room temperature to 250 °C. The peak on-wafer measured sensitivity (β v ) of 1027 mV/mW is achieved at 5 GHz at 50 °C. The maximum conjugately-matched sensitivity (β v,opt ) of 9030 mV/mW is obtained at 2 GHz at 50 °C and decreases to 1227 mV/mW at 250 °C. At room temperature, the dynamic range as high as 53 and 54 dB at 2 and 5 GHz is observed, respectively, which are the highest values reported so far.