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Self-assembled 2D finned covellite (CuS) for resistive RAM

Authors :
Royston Kuan Khoon Tan
Ashutosh Rath
Andrew T. S. Wee
Daniel H. C. Chua
Zhen Quan Cavin Ng
Source :
Applied Physics Letters. 113:063102
Publication Year :
2018
Publisher :
AIP Publishing, 2018.

Abstract

Copper sulfides (Cu2−xS) comprises a family of sulfides which possess good electrical and photovoltaic properties due to their self-doping (p-type) nature, attributed from the copper vacancies in their structure. Recently, metal sulfide thin films have been investigated for their resistive RAM behaviour due to the reversible formation of conductive bridges between crystalline structures. In this letter, 2D self-assembled finned covellite (CuS) was prepared via RF Magnetron Sputtering. This 2D finned CuS was found to be polycrystalline via TEM, exhibiting ReRAM behaviour with resistances having two orders of magnitude differences between 0 and −0.5 V. This fin structure eliminates the need for a multi-layered device which until now is the primary method of harnessing the ReRAM behaviour in copper sulphide. It gives rise to very low voltages of −3 V and 1 V for writing and reset, respectively, with a writing time of 20 ms.

Details

ISSN :
10773118 and 00036951
Volume :
113
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........d164d033d6bfd68b62ac86aaf22534b1
Full Text :
https://doi.org/10.1063/1.5027129