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ScAlN/3C-SiC/Si platform for monolithic integration of highly sensitive piezoelectric and piezoresistive devices
- Source :
- Applied Physics Letters. 116:132902
- Publication Year :
- 2020
- Publisher :
- AIP Publishing, 2020.
-
Abstract
- This paper reports on a platform for monolithic integration of piezoelectric and piezoresistive devices on a single chip using the ScAlN/3C-SiC/Si heterostructure. Surface acoustic wave devices with an electromechanical coupling of 3.2% and an out-of-band rejection as high as 18 dB are demonstrated using the excellent piezoelectric properties of ScAlN and low acoustic loss of 3C-SiC. Additionally, a large piezoresistive effect in the low-doped n-type 3C-SiC(100) thin film has been observed, which exceeds the previously reported values in any SiC thin films. The growth of the n-type 3C-SiC thin film was performed using the low pressure chemical vapor deposition technique at 1250 °C and the standard micro-electro-mechanical systems process is used for the fabrication of 3C-SiC piezoresistors. The piezoresistive effect was measured using the bending beam method in different crystallographic orientations. The maximum gauge factor is –47 for the longitudinal [100] orientation. Using the longitudinal and transverse gauge factors for different crystallographic orientations, the fundamental piezoresistive coefficients of the low-doped n-type 3C-SiC thin film are measured to be π 11 = ( − 14.5 ± 1.3 ) × 10 − 11 Pa−1, π 12 = ( 5.5 ± 0.5 ) × 10 − 11 Pa−1, and π 44 = ( − 1.7 ± 0.7 ) × 10 − 11 Pa−1.
- Subjects :
- 010302 applied physics
Materials science
Fabrication
Physics and Astronomy (miscellaneous)
business.industry
Surface acoustic wave
Heterojunction
02 engineering and technology
Chemical vapor deposition
021001 nanoscience & nanotechnology
01 natural sciences
Piezoresistive effect
Piezoelectricity
Gauge factor
0103 physical sciences
Optoelectronics
Thin film
0210 nano-technology
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 116
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........d190c3f3f04ae97716a6fdc9bc750866