6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

6A EOT Si 0.45 Ge 0.55 pFETs with 10 year lifetime at operating conditions (V DD =1V) are demonstrated. Ultra-thin EOT is achieved by interfacial layer (IL) scavenging. Negative Bias Temperature Instability (NBTI) is alleviated using a high Ge fraction, a thick SiGe quantum well (QW) and a thin Si cap. Hot Carrier Injection (HCI) and Time Dependent Dielectric Breakdown (TDDB) are shown also to not constitute a showstopper for optimized SiGe devices.