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Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface
- Source :
- Applied Physics Letters. 81:55-57
- Publication Year :
- 2002
- Publisher :
- AIP Publishing, 2002.
-
Abstract
- N-induced cavity nucleation at the CoSi2/Si interface has been investigated for different doses and its influence on improving the thermal stability of the silicide layer up to 1075 °C has been detailed. The N-implant energy and doses have been chosen in such a way that the projected range (Rp) was near the interface and the underlying polycrystalline silicon substrate was completely amorphized. After a thermal treatment of 975 °C, it has been found that the cavity density depends on the dose, but the cavity size is dose independent. The cavity density should be enough to saturate the silicide grain boundaries but not so high to neglect ripening and coalescence. A density of 2.5×1010 cavities/cm2 has been measured at a nitrogen dose of 7×1015/cm2 corresponding to a partial saturation of the silicide grain boundaries and to the higher stability gain (150 °C).
- Subjects :
- Coalescence (physics)
Materials science
Physics and Astronomy (miscellaneous)
Silicon
Condensed matter physics
Nucleation
chemistry.chemical_element
Thermal treatment
engineering.material
chemistry.chemical_compound
Crystallography
Polycrystalline silicon
chemistry
Silicide
engineering
Grain boundary
Thermal stability
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 81
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........d2286999044869df1f00497630d914f6