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Oxygen Precipitation in Highly Doped Silicon Substrates
- Source :
- ECS Journal of Solid State Science and Technology. 8:P12-P17
- Publication Year :
- 2019
- Publisher :
- The Electrochemical Society, 2019.
Details
- ISSN :
- 21628777 and 21628769
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- ECS Journal of Solid State Science and Technology
- Accession number :
- edsair.doi...........d22da54811c34de7c7d9f8dba18ecd0b
- Full Text :
- https://doi.org/10.1149/2.0081901jss