Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime

(GaIn)(NAs) vertical-cavity surface-emitting lasers for room-temperature emission at 1.3 μm wavelength are designed and grown by metal-organic vapor-phase epitaxy using dimethylhydrazine and tertiarybutylarsine. Room-temperature operation at wavelengths up to 1.285 μm is achieved with low optical pumping thresholds between 1.6 and 2.0 kW/cm2. Stimulated emission dynamics after femtosecond optical pumping are measured and compare favorably with results on (GaIn)As/Ga(PAs)-based structures.