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W-band push—push monolithic frequency doubler in 1-μm InP DHBT technology

Authors :
Hongfei Yao
Danyu Wu
Yongbo Su
Zhi Jin
Xiaoxi Ning
Ji Ge
Yuxiong Cao
Xiantai Wang
Source :
Journal of Semiconductors. 34:095006
Publication Year :
2013
Publisher :
IOP Publishing, 2013.

Abstract

A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Active balun is employed to transform the single-ended signal into differential output. Push—push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 × 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below −16 dBc and the conversion gain above 4.7 dB over 75–80 GHz.

Details

ISSN :
16744926
Volume :
34
Database :
OpenAIRE
Journal :
Journal of Semiconductors
Accession number :
edsair.doi...........d319bddec00d1eff192eb1899f41c89a
Full Text :
https://doi.org/10.1088/1674-4926/34/9/095006