Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications

MLA

Jin-Seong Park, et al. “Atomic Layer Chemical Vapor Deposition of SiO2 Thin Films Using a Chlorine-Free Silicon Precursor for 3D NAND Applications.” Ceramics International, vol. 47, July 2021, pp. 19036–42. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........d4175a148f9f308f3bd116440e583741&authtype=sso&custid=ns315887.

APA

Jin-Seong Park, Hye Mi Kim, Sang-Ho Kim, Geon Ho Baek, Seunghwan Lee, Deok Sin Kil, Ji hoon Baek, Yongjoo Park, Hyung-Soon Park, & Yusung Jin. (2021). Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications. Ceramics International, 47, 19036–19042.

Chicago

Jin-Seong Park, Hye Mi Kim, Sang-Ho Kim, Geon Ho Baek, Seunghwan Lee, Deok Sin Kil, Ji hoon Baek, Yongjoo Park, Hyung-Soon Park, and Yusung Jin. 2021. “Atomic Layer Chemical Vapor Deposition of SiO2 Thin Films Using a Chlorine-Free Silicon Precursor for 3D NAND Applications.” Ceramics International 47 (July): 19036–42. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........d4175a148f9f308f3bd116440e583741&authtype=sso&custid=ns315887.