Resistive switching characteristics of NiO/Ni nanostructure

We have studied variation of switching voltage of resistive random access memory (ReRAM). Basically, the switching voltage at every switching has a different value because there are many conduction paths, which are randomly chosen at every switching with different conductivity in an oxide insulator between top and bottom electrodes. Limitation of the number of conductive paths is expected to lead the suppression of the variation of switching voltage. In this study, Ni nanorods buried into the nanoholes of an anodic aluminum oxide (AAO) film have been fabricated to restrict the formation of many filaments and the switching behaviors of the In/NiO/Ni nanorods has been investigated.