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Effect of oxygen concentration and oxygen precipitation of the single crystalline wafer on solar cell efficiency

Authors :
Byoung Jin Oh
Yongrae Cho
Youngjin Yook
Sungsun Baek
Sungtae Kim
Song Hee Lee
Source :
Journal of the Korean Crystal Growth and Crystal Technology. 24:246-251
Publication Year :
2014
Publisher :
The Korea Association of Crystal Growth, 2014.

Abstract

Woongjin Energy Co., Ltd., Daejeon 305-509, Korea(Received November 13, 2014)(Revised November 27, 2014)(Accepted December 5, 2014)Abstract Recent studies have shown methods of improving solar cell efficiency. Especially on single crystalline siliconwafer which is high-efficiency solar cell material that has been widely studied. Interstitial oxygen (Oi) is the main impurityin the Czochralski (Cz) growing method, and excess of this can form precipitates during cell fabrication. We havedemonstrated the effect of Oi impurity and oxygen precipitation concentration of the wafer on Cz-silicon solar cell efficiency.The result showed a decrease in cell efficiency as Oi and oxygen precipitation increase. Moreover, we have found that thecritical point of [Oi] to bring higher cell efficiency is at 14.5 ppma in non-existent Bulk Micro Defect (BMD).Key wordsSolar cells, Efficiency, Czochralski silicon, Oxygen precipitation, BMD

Details

ISSN :
12251429
Volume :
24
Database :
OpenAIRE
Journal :
Journal of the Korean Crystal Growth and Crystal Technology
Accession number :
edsair.doi...........d5034dbdc361354453eff6b9255578c1
Full Text :
https://doi.org/10.6111/jkcgct.2014.24.6.246