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Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system
- Source :
- Journal of Applied Physics. 106:044510
- Publication Year :
- 2009
- Publisher :
- AIP Publishing, 2009.
-
Abstract
- Influences of Ni silicide phases on the effective work function (Φeff) modulation effect with Al incorporation has been investigated in the Ni silicide/HfSiON systems. We formed metal-insulator-semiconductor capacitors with Al incorporated Ni silicide (NiSi, Ni2Si, and Ni3Si) gates on HfSiON by Al solid-phase diffusion (Al-SPD) process or Al ion implantation (I/I) process. In the Al-SPD process, Al is deposited on Ni silicide gate. In the Al-I/I process, Al ions were doped in the upper part of Ni silicide layer. In both cases, we performed Al drive-in annealing under the condition of 450 °C for 30 min in N2 ambient. It is found that the flat-band voltage (Vfb) values of Al incorporated NiSi and Ni2Si gates shift negatively and identical independent of Al incorporation processes. A highly concentrated Al piled-up layer, which induces Φeff modulation to Al-Φeff value, seems to correspond to the Vfb modulation. On the other hand, Al incorporation has little influence on Φeff at the Ni3Si/HfSiON interface. We...
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 106
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........d52679890eab7feb029d07210dde3c2d
- Full Text :
- https://doi.org/10.1063/1.3203998