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Self-assembled InAs islands on GaAs(1̄1̄1̄) substrates
- Source :
- Surface Science. 385:L965-L970
- Publication Year :
- 1997
- Publisher :
- Elsevier BV, 1997.
-
Abstract
- Characterization of InAs self-assembled islands, grown on GaAs(111)B by molecular beam epitaxy, is carried out by atomic force microscopy and photoluminescence spectroscopy for different growth conditions. Islands show lateral sizes ca 40 to 300 nm long by 30 nm wide. Narrow height distributions are achieved centered ca 4 or 20 nm, depending on the growth conditions. Samples with the taller islands show the stronger luminescence. The position of the peaks is surprisingly similar to those reported for self-assembled islands on GaAs(100), despite the differences on crystal orientation and island sizes. This results suggests that the photoluminescence observed for both (100) and (111) orientation is not determined by quantum size confinement in the islands.
- Subjects :
- Photoluminescence
Nanotechnology
Surfaces and Interfaces
Condensed Matter Physics
Molecular physics
Surfaces, Coatings and Films
Gallium arsenide
chemistry.chemical_compound
chemistry
Materials Chemistry
Self-assembly
Indium arsenide
Luminescence
Spectroscopy
Quantum well
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 00396028
- Volume :
- 385
- Database :
- OpenAIRE
- Journal :
- Surface Science
- Accession number :
- edsair.doi...........d5405d1a5efe2bd59f1c32913a552008