Optically pumped Si-based edge-emitting GeSn laser

Authors :: Sattar Al-Kabi
Seyed Amir Ghetmiri
Mansour Mortazavi
Jifeng Liu
John Tolle
Hameed A. Naseem
Joe Margetis
Wei Du
Yiyin Zhou
Shui-Qing Yu
Greg Sun
Richard A. Soref
Baohua Li
Aboozar Mosleh
Wei Dou
Thach Pham
Source :: Conference on Lasers and Electro-Optics.
Publication Year :: 2017
Publisher :: OSA, 2017.
Abstract: We present double heterostructure GeSn edge emitting laser. The structure was grown on a Si substrate using a commercial chemical vapor deposition with GeH 4 and SnCl 4 . The lasing threshold of 68 KW/cm2 at 10K and maximum laser operating temperature of 110 K was achieved.