Study on nanocomposite Ti–Al–Si–Cu–N films with various Si contents deposited by cathodic vacuum arc ion plating

In this study, nanocomposite Ti-Al-Si-Cu-N films were deposited on high speed steel substrates by the vacuum cathode arc ion plating (AIP) technique. By virtue of X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), the influence of silicon content on the film microstructure and characteristics was investigated systematically, including the chemical composition, crystalline structure as well as cross-section morphologies. With increasing the silicon content, a deterioration of the preferred orientation and a dense globular structure were detected. In the meanwhile, atomic force microscopy (AFM), nano-indentation, Rockwell indenter and reciprocating test were also utilized to analyze the hardness, elastic modulus, H-3/E-2, friction coefficient, adhesive strength and wear rate of the Ti-Al-Si-Cu-N films. The results showed that an optimal silicon content correlated with the best mechanical and tribological properties of the presented Ti-Al-Si-Cu-N films existed. With increasing the silicon content, the hardness, elastic modulus and the ratio H-3/E-2 first were improved gradually, and then were impaired sharply again. When the silicon content reached to 6 at.%, the film possessed the highest hardness, elastic modulus and ratio H-3/E-2 of approximately 24 GPa, 218 GPa and 0.31, respectively. Besides, films containing both 6 at.% and 10 at.% Si contents obtained a relatively low friction coefficient and a good adhesive strength. The wear rate decreased with an increase in hardness, with the highest hardness corresponding to a wear rate around 1.3 x 10(-5)mm(3)/(N m) of the film with 6 at.% Si content. The correlations between hardness and tribological properties for the films were also examined. The essence of above phenomena was attributed to the variations of microstructure and morphologies in the films induced by the increasing silicon content. (C) 2012 Elsevier B. V. All rights reserved.