Cite

GaAs on silicon grown by molecular beam epitaxy: Progress and applications for selectively doped heterostructure transistors

MLA

Naresh Chand, et al. “GaAs on Silicon Grown by Molecular Beam Epitaxy: Progress and Applications for Selectively Doped Heterostructure Transistors.” Materials Science and Engineering: B, vol. 3, Sept. 1989, pp. 485–96. EBSCOhost, https://doi.org/10.1016/0921-5107(89)90161-x.



APA

Naresh Chand, J. S. Weiner, D. V. Lang, J. P. van der Ziel, & A. M. Sergent. (1989). GaAs on silicon grown by molecular beam epitaxy: Progress and applications for selectively doped heterostructure transistors. Materials Science and Engineering: B, 3, 485–496. https://doi.org/10.1016/0921-5107(89)90161-x



Chicago

Naresh Chand, J. S. Weiner, D. V. Lang, J. P. van der Ziel, and A. M. Sergent. 1989. “GaAs on Silicon Grown by Molecular Beam Epitaxy: Progress and Applications for Selectively Doped Heterostructure Transistors.” Materials Science and Engineering: B 3 (September): 485–96. doi:10.1016/0921-5107(89)90161-x.