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Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance
- Source :
- Chinese Physics B. 25:027305
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- An analytical model for a novel triple reduced surface field (RESURF) silicon-on-insulator (SOI) lateral double-diffused metal–oxide–semiconductor (LDMOS) field effect transistor with n-type top (N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional (2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage (BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer (Qntop) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results, showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.
- Subjects :
- 010302 applied physics
LDMOS
Materials science
Computer simulation
business.industry
Doping
General Physics and Astronomy
Silicon on insulator
Nanotechnology
High voltage
01 natural sciences
Electric field
0103 physical sciences
Optoelectronics
Breakdown voltage
Field-effect transistor
010306 general physics
business
Subjects
Details
- ISSN :
- 16741056
- Volume :
- 25
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........d6caa87cb301793f7e0ced8b81502ded