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Band Gap Insensitivity to Large Chemical Pressures in Ternary Bismuth Iodides for Photovoltaic Applications

Authors :
Su Huang
Rohan Mishra
Xing Huang
Pratim Biswas
Source :
The Journal of Physical Chemistry C. 120:28924-28932
Publication Year :
2016
Publisher :
American Chemical Society (ACS), 2016.

Abstract

Ternary bismuth iodides (A3Bi2I9, where A is a monovalent cation) have been recently suggested as less toxic alternatives to lead halide perovskites for photovoltaic applications. Using density functional theory based calculations, we predict that the band gap in these compounds is insensitive to chemical pressure applied by changing the size of A-site cations, which is confirmed experimentally. We further show that the band gap in A3Bi2I9 compounds increases (or decreases) by stretching (or compressing) Bi2I9 bioctahedra, and the observed band gap insensitivity is a direct result of the counteractive interplay of three factors: the size of the A-site cations, the presence of H-bonds with organic A-site cations, and spin–orbit coupling (SOC) effects. Our study demonstrates that the layered structure of A3Bi2I9 compounds intrinsically limits any significant modification of their band gap and highlights the need for three-dimensional connectivity of BiI6 octahedra in order to achieve high efficiency Bi-base...

Details

ISSN :
19327455 and 19327447
Volume :
120
Database :
OpenAIRE
Journal :
The Journal of Physical Chemistry C
Accession number :
edsair.doi...........d74870ba04c29c55aa059b1ffafbaede