Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization

MLA

Jyh Ling Lin, et al. “Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization.” Japanese Journal of Applied Physics, vol. 48, Mar. 2009, p. 031204. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........d7711ab630e3116350a52ae36a40a28d&authtype=sso&custid=ns315887.

APA

Jyh Ling Lin, Huang Jen Chen, Huang-Chung Cheng, & Fang Long Chang. (2009). Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization. Japanese Journal of Applied Physics, 48, 031204.

Chicago

Jyh Ling Lin, Huang Jen Chen, Huang-Chung Cheng, and Fang Long Chang. 2009. “Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization.” Japanese Journal of Applied Physics 48 (March): 031204. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........d7711ab630e3116350a52ae36a40a28d&authtype=sso&custid=ns315887.