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Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer
- Source :
- Science China Materials. 66:219-232
- Publication Year :
- 2022
- Publisher :
- Springer Science and Business Media LLC, 2022.
- Subjects :
- General Materials Science
Subjects
Details
- ISSN :
- 21994501 and 20958226
- Volume :
- 66
- Database :
- OpenAIRE
- Journal :
- Science China Materials
- Accession number :
- edsair.doi...........d811f162a70d89248aded6b8c35043aa
- Full Text :
- https://doi.org/10.1007/s40843-022-2124-7