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Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures
- Source :
- 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- In this paper, we report on the static and switching performance of 1.2kV 4H-SiC planar MOSFETs, 4H-SiC trench MOSFETs and Si IGBT over a wide temperature range of 90K to 493K. The influence of temperature upon device on-resistance, transfer characteristics and switching characteristics are characterized and analyzed. For the first time, trap related dynamic on-resistance degradation for all devices is investigated at cryogenic temperatures, especially in 4H-SiC trench MOSFET. Effects of interface traps on on-resistance degradation are examined.
- Subjects :
- 010302 applied physics
Materials science
Trench mosfet
business.industry
02 engineering and technology
Insulated-gate bipolar transistor
Atmospheric temperature range
021001 nanoscience & nanotechnology
01 natural sciences
Characterization (materials science)
Planar
0103 physical sciences
Trench
Optoelectronics
Degradation (geology)
Power MOSFET
0210 nano-technology
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
- Accession number :
- edsair.doi...........d83a17f8ebc94bb7d3f74d2bb3e829bc