Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

MLA

Young Jin Choi, et al. “Tri-State Resistive Switching Characteristics of MnO/Ta2O5 Resistive Random Access Memory Device by a Controllable Reset Process.” Journal of Physics D: Applied Physics, vol. 51, May 2018, p. 225102. EBSCOhost, https://doi.org/10.1088/1361-6463/aabb77.

APA

Young Jin Choi, Hyun Ho Lee, Nam Joo Lee, Tae-Sik Yoon, Quanli Hu, Tae Su Kang, Chi Jung Kang, E. J. Yoo, & Tae Sung Lee. (2018). Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process. Journal of Physics D: Applied Physics, 51, 225102. https://doi.org/10.1088/1361-6463/aabb77

Chicago

Young Jin Choi, Hyun Ho Lee, Nam Joo Lee, Tae-Sik Yoon, Quanli Hu, Tae Su Kang, Chi Jung Kang, E. J. Yoo, and Tae Sung Lee. 2018. “Tri-State Resistive Switching Characteristics of MnO/Ta2O5 Resistive Random Access Memory Device by a Controllable Reset Process.” Journal of Physics D: Applied Physics 51 (May): 225102. doi:10.1088/1361-6463/aabb77.