Many-particle interaction in the tunneling nanostructures and STM/STS measurements

The influence of many-particle interaction on tunneling characteristics in low dimensional structures is analyzed theoretically and investigated experimentally by means of STM/STS methods. It is shown that indirect interaction (trough band states of semiconductors) can often lead to increased tunneling conductivity for bias range where the direct interaction between impurity states is not significant. New method for preparation of electronic states with definite spin configuration on neighboring atoms is suggested. The energy splitting of opposite spin electrons can be about 0.5 - 1 eV. The different types of tunneling conductivity behavior in ultra small junction with superconductors is analyzed.© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.