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[Untitled]
- Source :
- Journal of Computational Electronics. 1:317-321
- Publication Year :
- 2002
- Publisher :
- Springer Science and Business Media LLC, 2002.
-
Abstract
- The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an sp3s* tight binding model. Two sources of broadening due to configuration and concentration disorder are identified. The concentrational disorder dominates for systems up to at least one million atoms and depends on problem size through an inverse square root law. Significant differences (over 12 meV) in band edge energies are seen depending on choice of granularity of alloy clusters.
- Subjects :
- Materials science
Condensed matter physics
Alloy
Nanotechnology
Electronic structure
Edge (geometry)
engineering.material
Thermal conduction
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Tight binding
Nanoelectronics
Modeling and Simulation
Nano
engineering
Granularity
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 15698025
- Volume :
- 1
- Database :
- OpenAIRE
- Journal :
- Journal of Computational Electronics
- Accession number :
- edsair.doi...........d91aaa74e5df5a370fb06cb54fdca70e
- Full Text :
- https://doi.org/10.1023/a:1020774819509