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A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs
- Source :
- IEEE Transactions on Electron Devices. 70:2229-2234
- Publication Year :
- 2023
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2023.
- Subjects :
- Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 70
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........d93a2b8e3b8b1de1ddb60bf5b6b3feac
- Full Text :
- https://doi.org/10.1109/ted.2023.3257282