The optimum sintering condition for KSrPO 4 :Eu 3+ phosphors applied in WLEDs

This paper investigates the influence of various sintering temperatures on the microstructure and photoluminescence properties of KSr 0.99 PO 4 :Eu 0.01 3+ phosphors prepared by microwave-assisted sintering. The package properties of KSr 0.99 PO 4 :Eu 0.01 3+ phosphors combined with a n-UV InGaN chip are also investigated. To achieve maximum luminescence, the optimum sintering temperature for KSr 0.99 PO 4 :Eu 0.01 3+ phosphors prepared by microwave assisted-sintering is 1200 °C due to the pure phase and uniform and large particles (as identified by XRD and SEM). The results of the package properties showed that KSr 1−x PO 4 :xEu 3+ (x = 0.01) phosphor sintered at 1200 °C by microwave-assisted sintering could emit orange-red light via the n-UV InGaN chip.