Effects of Gamma-Ray Irradiation and Thermal Annealing on Characteristics of 3C-SIC MOS Structure

Thermal annealing of interface traps introduced by 60Co gamma-ray irradiation in 3C-SiC metal-oxide-semiconductor (MOS) structures have been studied by high-frequency capacitance-voltage measurements. By isochronal annealing up to 400°C, two recovery stages were observed, which correspond to the annealing of two different types of the interface traps. It was found that introduction of the interface traps was suppressed by thermal annealing before irradiation. Radiation tolerance of 3C-SiC MOS structure is explained in terms of the room temperature annealing of the interface traps introduced by irradiation.