Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE

In this paper, the Chemical Beam Epitaxy approach to GaAsN material growth has been investigated. Photoluminescence and Hall effect measurements were performed to clarify the influence of defects on the transport properties, those of holes in particular. The PL intensity of near-band emission (1.35 eV-peak) for GaAs0.996N0.004 at low temperature ( 1) indicated that the N atoms were alloyed in a disordered arrangement. As a result, the corresponding alloy scattering mechanism was enhanced, contributing to the hole mobility decrease. However, compared to p-type GaAsN grown by MBE or MOCVD, our CBE-grown GaAsN showed a higher value of hole mobility.