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An InGaN/GaN MQWs Solar Cell Improved By a Surficial GaN Nanostructure as Light Traps
- Source :
- IEEE Photonics Technology Letters. 30:83-86
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2018.
-
Abstract
- The InGaN/GaN multi-quantum-wells (MQWs) solar cells employing the surficial GaN nanostructure as light traps were investigated. The performance of the InGaN/GaN MQWs solar cell with nano holes surface shows an obvious advantage over that with nano poles, much less than the planar one. From the measurements of EQE and photoluminescence spectra, the enhancement of photoelectric response contributes to the device performances. Because the effective light absorption is increased, the conversion efficiency significantly improves from 1.02% (planar surface) up to 2.235% (nano holes surface). Although the performance is still low, it is exactly an effective method to enhance the conversion efficiency via introducing nanostructures on the surface of the InGaN/GaN MQWs cells.
- Subjects :
- 010302 applied physics
Nanostructure
Photoluminescence
Materials science
business.industry
Energy conversion efficiency
Gallium nitride
02 engineering and technology
Photoelectric effect
021001 nanoscience & nanotechnology
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
chemistry
law
0103 physical sciences
Solar cell
Nano
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
Absorption (electromagnetic radiation)
business
Subjects
Details
- ISSN :
- 19410174 and 10411135
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- IEEE Photonics Technology Letters
- Accession number :
- edsair.doi...........d9854eeaacd911f668ac23a4dab9d6af