Heavily-doped SOI substrate and transfer printing for charge injection into TMDC layer

Layered semiconductors of transition metal dichalcogenides (TMDC) have been considerable attention for both scientific interest and practical applications [1]. This paper describes a method to fabricate TMDC field-effect transistors (FETs) with heavily-doped silicon on insulator (SOI) substrate. The FETs are constructed by transfer of TMDC crystals on the surface of pre-patterned SOI substrate. This method can eliminate the deposition of metals and dielectrics on a TMDC surface [2]. In addition, various TMDC can be applied to the fabrication of FETs. The heavily-doped SOI serves as a gate electrode, while an efficient injection of carriers into TMDC can be accomplished because of overlap structure between gate electrode and source/drain contacts. The device characteristics are investigated.