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Novel technique forp‐type nitrogen doped ZnSe epitaxial layers
- Source :
- Applied Physics Letters. 62:270-272
- Publication Year :
- 1993
- Publisher :
- AIP Publishing, 1993.
-
Abstract
- We report a novel technique to obtain p‐type ZnSe layers doped with nitrogen. The layers were grown in a low‐pressure metalorganic vapor phase epitaxy system using ammonia as the dopant source. A rapid thermal anneal was used to enhance the activation of the nitrogen acceptors. Net acceptor concentration values as high as 3×1016/cm3 were obtained from capacitance‐voltage measurements and the profile was uniform over the thickness of the epitaxial layers. The 7 K photoluminescence spectrum was dominated by the acceptor bound exciton peak; the donor‐acceptor pair spectra were also observed.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 62
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........daa0db05d10f4b4befbd10b4b8036b4c