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Timing in thick silicon detectors for a Compton camera
Timing in thick silicon detectors for a Compton camera
- Source :
- IEEE Transactions on Nuclear Science. 49:2549-2557
- Publication Year :
- 2002
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2002.
-
Abstract
- In the scope of construction of a PET apparatus based on detection of Compton scattering in silicon (Compton camera), the timing properties of 1-mm-thick silicon pad and double-sided microstrip, detectors are studied. Timing in pad detectors is also investigated for 140.5 keV /sup 99m/Tc and 364.5 keV /sup 131/I gamma rays in view of a SPECT application. Compton scattering and energy loss of the Compton electron in the silicon detector are simulated using the GEANT package. The electric field in the detector is calculated numerically for a fully depleted detector in the abrupt junction approximation, taking into account the geometry and varying the reverse voltage. Signal formation is studied using Ramo's theorem and pulse shaping properties of the trigger circuit. A time-walk cut is seen to be directly corresponding to a deposited-energy cut. At 10 keV threshold in 1-mm-thick detectors, 10 ns timing windows are shown to reject a significant portion of events, degrading efficiency or limiting the angular range in a prohibitive way. More involved techniques are therefore suggested, either in the electronics circuit or in later stages of the trigger.
- Subjects :
- Physics
Nuclear and High Energy Physics
Silicon
Physics::Instrumentation and Detectors
business.industry
Scattering
Astrophysics::High Energy Astrophysical Phenomena
Detector
Compton scattering
Gamma ray
chemistry.chemical_element
Electron
Pulse shaping
Optics
Nuclear Energy and Engineering
chemistry
Electrical and Electronic Engineering
business
Voltage
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 49
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........dad17295c519e3fe02152d4054bf3221
- Full Text :
- https://doi.org/10.1109/tns.2002.803884