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Publisher’s Note: 'Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy' [Appl. Phys. Lett. 82, 3433 (2003)]
- Source :
- Applied Physics Letters. 82:4611-4611
- Publication Year :
- 2003
- Publisher :
- AIP Publishing, 2003.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 82
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........dae0340eefb5194d49b3431b0b149a90
- Full Text :
- https://doi.org/10.1063/1.1589006