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Reactions in a multilayered Si (substrate)/Ta/Mg/Fe/Ta/Pd thin-film structure during annealing and deuterium absorption

Authors :
Jacques Huot
W. Peter Kalisvaart
David Mitlin
Mohsen Danaie
Xuehai Tan
Helmut Fritzsche
Gianluigi A. Botton
Source :
Acta Materialia. 90:259-271
Publication Year :
2015
Publisher :
Elsevier BV, 2015.

Abstract

Nanolayered composites based on Fe and Mg serve as insightful model systems for understanding a wide range of hydrogen storage materials. We examined the stability of the multilayered thin-film structure Si (substrate)/Ta/Mg/Fe/Ta/Pd after deuterium absorption and desorption and after annealing the specimen at 250 °C. We employed two complementary techniques for analysis: neutron reflectometry and analytical transmission electron microscopy. The neutron reflectometry provides evidence that interdiffusion is significant at 250 °C, but with the film general structure still in place. In contrast, after deuterium absorption and desorption at the same temperature, the changes of the film structure are more severe, such that the Mg/Fe/Ta/Pd layers appear to be fully intermixed, with only the bottom Ta layer remaining intact. Electron microscopy observations indicate that annealing at 250 °C has caused a phase transformation to form Mg 5 Pd 2 at the upper sections of the Mg layer, with the general periodicity of the sample still maintained, in accordance with the reflectometry measurements. In the desorbed state, the layers show substantial variations in local thicknesses, with thicker regions containing a range of Mg–Pd compounds and the thinner portions remaining primarily Mg. This degradation sequence occurs despite the Fe layer remaining chemically unchanged. We provide a mechanistic description regarding the observed evolution of the multilayered structure during annealing and deuterium cycling.

Details

ISSN :
13596454
Volume :
90
Database :
OpenAIRE
Journal :
Acta Materialia
Accession number :
edsair.doi...........daedde83fdb4ba0619c1ba6b55677315
Full Text :
https://doi.org/10.1016/j.actamat.2014.12.037