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Time behavior of the internal Q switching in GaAs lasers under electron-beam excitation
- Source :
- IEEE Journal of Quantum Electronics. 9:324-327
- Publication Year :
- 1973
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1973.
-
Abstract
- Time-resolved spectra of an internal Q -switching emission of electron-beam-excited GaAs lasers were measured. The spectra shifted to longer wavelengths at the rate of 5.63 A/ns at 85 K. Time-resolves spectra of a normal laser emission were also measured to be shifted to longer wavelengths at the rate of about 0.3 A/ns. This remarkable difference of the spectral shifts can be understood if the former shift is caused by the quasi-Fermi level in the conduction band and the latter shift is caused by thermal effects.
- Subjects :
- Materials science
business.industry
Laser pumping
Condensed Matter Physics
Laser
Q-switching
Atomic and Molecular Physics, and Optics
Semiconductor laser theory
law.invention
Quantum dot laser
law
Optoelectronics
Semiconductor optical gain
Electrical and Electronic Engineering
Atomic physics
business
Quantum well
Tunable laser
Subjects
Details
- ISSN :
- 15581713 and 00189197
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Quantum Electronics
- Accession number :
- edsair.doi...........db388e0549870efd4f45a6e6f9b8e322
- Full Text :
- https://doi.org/10.1109/jqe.1973.1077451