Interplay between Dry Etch and Wet Clean in Patterning La2O3/HfO2 Containing High-k/metal Gate Stacks

A dry-wet patterning process for La2O3/HfO2-containing high-κ/ metal gate stacks was successfully developed. The process meets the stringent requirements of complete removal of the high-κ layers and metal-containing sidewall residues without inducing silicon recess or undercut. The interaction between the dry etch and wet clean steps was studied. Use of a BCl3-based plasma process facilitated the cleaning process as it damages and modifies the high-κ layers in the active area. When the dry etch process ends with a BCl3-step, La-containing residues were formed inhomogeneously over the wafer within the time scale of hours. These residues could no longer be removed with a wet clean, but were not observed when the dry etch and wet clean processes were integrated. This demonstrates that an integrated etch-clean process enlarges the process window.