Low-temperature direct growth for low dislocation density in III-V on Si towards high-efficiency III-V/Si tandem solar cells

MLA

Masafumi Yamaguchi, et al. “Low-Temperature Direct Growth for Low Dislocation Density in III-V on Si towards High-Efficiency III-V/Si Tandem Solar Cells.” Japanese Journal of Applied Physics, vol. 60, Feb. 2021, p. SBBF14. EBSCOhost, https://doi.org/10.35848/1347-4065/abde2b.

APA

Masafumi Yamaguchi, Yoshio Ohshita, Yu-Cian Wang, Nobuaki Kojima, & Akio Yamamoto. (2021). Low-temperature direct growth for low dislocation density in III-V on Si towards high-efficiency III-V/Si tandem solar cells. Japanese Journal of Applied Physics, 60, SBBF14. https://doi.org/10.35848/1347-4065/abde2b

Chicago

Masafumi Yamaguchi, Yoshio Ohshita, Yu-Cian Wang, Nobuaki Kojima, and Akio Yamamoto. 2021. “Low-Temperature Direct Growth for Low Dislocation Density in III-V on Si towards High-Efficiency III-V/Si Tandem Solar Cells.” Japanese Journal of Applied Physics 60 (February): SBBF14. doi:10.35848/1347-4065/abde2b.