Growth of diamond particles on sharpened Si tips

Growth of diamond particles on sharp silicon tips in a hot-filament CVD process was investigated. Highly preferential deposition of the particles on the ends of the tips has been found. An explanation is given for the phenomenon based on the idea that the ends have an increased temperature due to localized recombination of hydrogen, involved in the process, on the tips. HRTEM and electron diffraction investigations of the initial stages of the growth have demonstrated a direct localized epitaxial growth of diamond on silicon.