A new inverter-based charge pump circuit with high conversion ratio and high power efficiency

The current paper presents a new inverter-based charge pump circuit with high conversion ratio and high power efficiency. The proposed charge pump, which consists of a PMOS pass transistor, inverter-based switching transistors, and capacitors, can improve output voltage and conversion ratio of the circuit. The proposed charge pump was fabricated with TSMC 0.35@mm 2P4M CMOS technology. The chip area without pads is only 0.87mmx0.65mm. The measured results show that the output voltage of the four-stage charge pump circuit with 1.8V power supply voltage (V"D"D=1.8V) can be pumped up to 8.2V. The proposed charge pump circuit achieves efficiency of 60% at 80@mA.